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nec's 1 w, l&s-band medium power gaas hj-fet features ? low cost plastic surface mount package available on tape and reel ? usable to 3.7 ghz: fixed wireless access, ism, wll, mmds, imt-2000, pcs ? high output power: 30 dbm typ with 5.0 v vdc 27 dbm typ with 3.5 v vdc ? high linear gain: 12 db typ at 1.9 ghz ? low thermal resistance: 30 c/w ne651r479a outline dimensions (units in mm) package outline 79a description nec's ne651r479a is a gaas hj-fet designed for medium power mobile communications, fixed wireless access, ism, wll, pcs, imt-2000, and mmds transmitter and subscriber applications. it is capable of delivering 0.5 watts of output power (cw) at 3.5 v, and 1 watt of output power (cw) at 5 v with high linear gain, high efficiency, and excellent linearity. reliability and performance uniformity are assured by nec's stringent quality and control procedures. t h 8 x source gate drain 4.2 max 5.7 max 4.4 max 0.8 0.15 0.6 0.15 5.7 max 0.4 0.15 source gate drain 1.2 max 1.0 max 3.6 0.2 0.8 max 0.9 0.2 0.2 0.1 1.5 0.2 (bottom view) california eastern laboratories electrical characteristics (t c = 25 c) part number ne651r479a package outline 79a symbols characteristics units min typ max test conditions p out output power dbm 26.0 27.0 g l linear gain 1 db 12.0 add power added efficiency % 52 60 i d drain current ma 220 i dss saturated drain current a 0.7 v ds = 2.5 v, v gs = 0 v v p pinch-off voltage v -2.0 -0.4 v ds = 2.5 v, i d = 14 ma bv gd gate to drain break down voltage v 12 i gd = 14 ma r th thermal resistance, channel to case c/w 30 50 f = 1.9 ghz, v ds =3.5 v p in = +15 dbm, r g = 1 k ? , i dsq = 50 ma (rf off) 2 notes: 1. p in = 0 dbm. 2. dc performance is 100% tested. wafers are sample tested for rf performance. wafer rejection criteria for standard devices is 1 reject for sample lot. note: 1. p in = 0 dbm. symbols characteristics units min typ max test conditions p out output power dbm 29.5 g l linear gain 1 db 12.0 add power added efficiency % 58 i d drain current ma 350 f = 1.9 ghz, v ds = 5 v p in = +15 dbm, r g = 1 k ? , i dsq = 50 ma (rf off) typical 5 v rf performance for reference (not specified) (t c = 25 c)
ne651r479a absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v ds drain to source voltage v 8 v gs gate to source voltage v -4 i ds drain current a 1.0 i gf gate forward current ma 10 i gr gate reverse current ma 10 p t total power dissipation 2 w 2.5 t ch channel temperature c 150 t stg storage temperature c -65 to +150 notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. mounted on a 50 x 50 x 1.6 mm double copper clad epoxy glass pwb. t a = +85 c NE651R479A-T1-A 1 kpcs/reel ne651r479a-a bulk, 100 pcs. min. ordering information note: 1. embossed tape, 12 mm wide. part number qty recommended operating limits symbol parameter units min typ max v ds drain to source voltage v 3.5 6.0 g comp gain compression 1 db 3.0 t ch channel temperature c +125 note: 1. recommended maximum gain compression is 3.0 db at v ds = 4.2 to 5.5 v. typical 3.5 v rf performance for reference (not specified) (t c = 25 c) symbols characteristics units min typ max test conditions p out output power dbm 27.0 g l linear gain 1 db 14.0 add power added efficiency % 60 i d drain current ma 230 f = 900 mhz, v ds =3.5 v p in = +13 dbm, r g = 1 k ? , i dsq = 50 ma (rf off)
ne651r479a total power dissipation vs. case temperature total power dissipation, p t (w) case/circuit temperature (t c ) ? c 5 4 3 2 1 0 50 100 150 25 r th = 50 c/w typical performance curves (t a = 25 c) transconductance and drain current vs. gate voltage -1.20 100 0.00 1.50 0.30 0.60 0.90 1.20 1.00 0.00 0.20 0.40 0.60 0.80 transconductance, gm (ms) gate voltage, v g (v) drain current, i d (a) drain voltage, v d (v) drain current vs. drain voltage drain current, i d (a) frequency, f (ghz) maximum available gain vs. frequency 0.1 0.2 0.5 1.0 2.0 4.0 30.0 25.0 20.0 15.0 10.0 5.0 2.2 v, 50 ma 3.5 v, 50 ma 4.6 v, 100 ma maximum available gain, g mag (db) 1.5 1.25 1.00 0.75 0.5 0.25 0 012 3456 v gs = 0v -0.4v -0.2v -0.8v -1.0v -0.6v
ne651r479a v d = 5 v, i d = 100 ma frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) 0.50 0.905 -171.35 7.390 85.67 0.031 3.68 0.664 -178.52 0.22 23.77 0.60 0.905 -176.45 6.174 81.57 0.031 1.08 0.667 178.06 0.26 22.99 0.70 0.904 179.28 5.310 77.91 0.031 -0.70 0.669 175.09 0.31 22.34 0.80 0.904 172.25 4.650 74.54 0.031 -2.57 0.669 172.45 0.36 21.76 0.90 0.904 172.25 4.144 71.29 0.031 -4.06 0.670 170.01 0.40 21.26 1.00 0.903 169.17 3.729 68.22 0.031 -5.54 0.670 167.69 0.45 20.80 1.10 0.903 166.26 3.393 65.17 0.031 -7.10 0.671 165.50 0.49 20.39 1.20 0.903 163.57 3.115 62.32 0.031 -8.31 0.672 163.46 0.54 20.02 1.30 0.902 160.94 2.878 59.48 0.031 -9.72 0.672 161.46 0.59 19.68 1.40 0.902 158.40 2.675 56.63 0.031 -11.05 0.673 159.54 0.63 19.36 1.50 0.901 155.94 2.497 53.91 0.031 -12.24 0.674 157.65 0.68 19.06 1.60 0.900 153.50 2.344 51.18 0.031 -13.54 0.675 155.81 0.73 18.79 1.70 0.900 151.13 2.207 48.51 0.031 -14.55 0.675 154.03 0.77 18.52 1.80 0.899 148.74 2.087 45.82 0.031 -16.11 0.676 152.22 0.82 18.28 1.90 0.898 146.42 1.978 43.18 0.031 -17.19 0.677 150.61 0.87 18.05 2.00 0.898 144.10 1.882 40.54 0.031 -18.30 0.679 148.90 0.92 17.62 2.10 0.897 141.78 1.794 37.96 0.031 -19.09 0.680 147.27 0.97 17.62 2.20 0.896 139.45 1.714 35.31 0.031 -20.36 0.680 145.62 1.02 16.50 2.30 0.896 137.20 1.641 32.77 0.031 -21.58 0.682 144.10 1.06 15.73 2.40 0.895 134.95 1.575 30.22 0.031 -22.87 0.684 142.52 1.11 15.06 2.50 0.895 132.69 1.514 27.72 0.031 -24.28 0.686 141.08 1.14 14.60 2.60 0.894 130.42 1.458 25.19 0.031 -25.45 0.687 139.60 1.92 14.07 2.70 0.894 128.13 1.406 22.65 0.031 -26.78 0.689 138.08 1.23 13.69 2.80 0.893 125.84 1.360 20.17 0.031 -27.62 0.690 136.71 1.28 13.25 2.90 0.892 123.53 1.315 17.71 0.031 -29.24 0.693 135.40 1.32 12.90 3.00 0.891 121.12 1.273 15.17 0.031 -30.07 0.695 133.97 1.37 12.51 3.10 0.890 118.74 1.237 12.88 0.030 -31.40 0.699 132.83 1.45 12.17 3.20 0.889 116.40 1.199 10.24 0.031 -31.97 0.699 131.33 1.47 11.83 3.30 0.889 113.93 1.167 7.72 0.031 -33.46 0.703 130.05 1.49 11.63 3.40 0.888 111.57 1.134 5.26 0.031 -34.38 0.704 128.87 1.54 11.30 3.50 0.887 109.17 1.105 279 0.031 -35.71 0.708 127.72 1.57 11.07 3.6 0.886 106.64 1.078 0.35 0.031 -37.09 0.711 126.68 1.61 10.84 3.7 0.886 1.04.11 1.052 -2.06 0.031 -38.46 0.715 125.68 1.62 10.68 3.8 0.885 101.52 1.027 -4.48 0.032 -39.84 0.719 124.84 1.60 10.51 3.9 0.885 98.85 1.005 -6.81 0.032 -40.94 0.725 124.23 1.61 10.40 4.0 0.882 95.89 0.985 -9.16 0.032 -42.41 0.734 123.96 1.63 10.25 typical scattering parameters (t a = 25 ? c) coordinates in ohms frequency in ghz v d = 5 v, i d = 100 ma mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , note: 1. gain calculation: mag = maximum available gain msg = maximum stable gain 100 50 25 10 0 j100 -j100 j50 -j50 j25 -j25 -j10 j10 s11 s22 0.5 4.0 4.0 0.5 s12 s21 -20 -22.5 17.5 20 8 -26 14 -32
ne651r479a v d = 3.5 v, i d = 50 ma frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) 0.50 0.89 -168.01 6.49 86.49 0.04 2.44 0.63 -173.92 0.17 21.59 0.60 0.89 -173.64 5.43 82.00 0.04 -0.91 0.63 -177.95 0.21 20.82 0.70 0.89 -178.28 4.68 78.02 0.04 -3.46 0.63 178.68 0.25 20.17 0.80 0.89 177.73 4.10 74.39 0.04 -5.97 0.63 175.74 0.29 19.59 0.90 0.89 174.20 3.65 70.90 0.04 -8.08 0.63 173.09 0.32 19.09 1.00 0.89 170.95 3.29 67.60 0.04 -10.18 0.63 170.63 0.36 18.64 1.10 0.89 167.90 2.99 64.34 0.04 -12.21 0.64 168.31 0.40 18.23 1.20 0.89 165.11 2.75 61.32 0.04 -14.08 0.64 166.20 0.43 17.86 1.30 0.89 162.38 2.54 58.30 0.04 -15.97 0.64 164.15 0.47 17.51 1.40 0.89 159.77 2.36 55.29 0.04 -17.77 0.64 162.17 0.50 17.19 1.50 0.89 157.25 2.20 52.40 0.04 -19.54 0.64 160.27 0.56 16.99 1.60 0.88 154.75 2.07 49.51 0.04 -21.34 0.64 158.40 0.60 16.72 1.70 0.88 152.33 1.95 46.67 0.04 -22.87 0.64 156.62 0.64 16.46 1.80 0.88 149.91 1.84 43.82 0.04 -24.84 0.64 154.81 0.67 16.21 1.90 0.88 147.55 1.74 41.04 0.04 -26.40 0.65 153.20 0.72 15.98 2.00 0.88 145.21 1.66 38.26 0.04 -28.02 0.65 151.49 0.77 15.86 2.10 0.88 142.87 1.58 35.55 0.04 -29.38 0.65 149.87 0.81 15.65 2.20 0.88 140.51 1.51 32.76 0.04 -31.08 0.65 148.24 0.86 15.45 2.30 0.88 138.25 1.44 30.08 0.04 -32.73 0.65 146.74 0.89 15.26 2.40 0.88 135.98 1.39 27.39 0.04 -34.35 0.66 145.17 0.93 15.08 2.50 0.88 133.71 1.33 24.76 0.04 -36.08 0.66 143.74 0.96 14.91 2.60 0.88 131.45 1.28 22.10 0.04 -37.68 0.66 142.27 1.03 13.82 2.70 0.88 129.14 1.23 19.43 0.04 -39.43 0.66 140.78 1.05 13.24 2.80 0.88 126.84 1.19 16.80 0.04 -40.80 0.66 139.41 1.10 12.64 2.90 0.88 124.54 1.15 14.23 0.04 -42.57 0.67 138.12 1.13 12.17 3.00 0.88 122.13 1.12 11.57 0.04 -44.05 0.67 136.69 1.20 11.61 3.10 0.88 119.76 1.08 9.15 0.04 -45.84 0.68 135.56 1.22 11.38 3.20 0.87 117.42 1.05 6.40 0.04 -46.80 0.68 134.07 1.27 10.94 3.30 0.87 114.95 1.02 3.77 0.04 -48.59 0.68 132.79 1.29 10.71 3.40 0.87 112.59 0.99 1.18 0.04 -49.84 0.68 131.61 1.34 10.34 3.50 0.87 110.20 0.97 -1.40 0.04 -51.37 0.69 130.47 1.36 10.14 3.60 0.87 107.68 0.94 -3.98 0.04 -53.04 0.69 129.41 1.40 9.86 3.70 0.87 105.16 0.92 -6.50 0.04 -54.52 0.70 128.40 1.41 9.67 3.80 0.87 102.57 0.90 -9.02 0.04 -56.08 0.70 127.55 1.44 9.47 3.90 0.87 99.92 0.88 -11.46 0.04 -57.48 0.71 126.90 1.44 9.34 4.00 0.87 97.00 0.86 -13.94 0.04 -59.08 0.72 126.57 1.45 9.20 typical scattering parameters (t a = 25 ? c) coordinates in ohms frequency in ghz v d = 3.5 v, i d = 50 ma mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , note: 1. gain calculation: mag = maximum available gain msg = maximum stable gain 100 50 25 10 0 j100 -j100 j50 -j50 j25 -j25 -j10 j10 s11 s22 0.5 4.0 4.0 0.5 +90? +60? +30? +0? -30? -60? -90? -120? -150? +180? +150? +120? s12 s21 0.5 4.0 4.0 0.5
application circuit (2.50 - 2.70 ghz) ne651r79a 1 tf-100637 test circuit blk 15 4 2-56 x 3/16 phillips pan head 14 2 ma101j c2, c3 case 1 100 pf cap murata 13 1 mcr03j201 r1 0603 200 ohm resistor rohm 12 2 100a5r1cp150x c1, c5 case a 5.1 pf cap atc 11 1 100a002cp150x c4 case a 2.0 pf cap atc 10 1 100a1r5jp150x c6 case a 1.5 pf cap atc 9 2 491a105k025as-x c12, c13 case a 1uf kemet 8 2 grm40x7r104k025bl c10, c11 0805 1uf cap murata 7 2 grm40c0g102j050bd c8, c9 0805 1000 pf cap murata 6 1 ne6510179a u1 ic nec 5 1 703401 p1 ground lug concord 4 1 1250-003 j3, j4 feedthru murata 3 1 2052-5636-02 j1, j2 flange mount jack receptacle 2 2 fd-100637 pcb ne6500379a-eval fabrication drawing 1 t h 8 x j1 gnd rf in v g j3 v d j4 c3 c5 c9 c11 c2 c8 c10 r1 c1 c4 u1 c6 j2 rf out 100637 ne65xxx79a-ev .034 c13 c12 gnd p1 contact cel engineering for artwork and more detailed information. c2 c1 c4 c8 c10 c12 c13 c11 c9 c3 v d j4 l = .874 w = .010 l = .890 w = .010 l = .280 w = .050 l = .260 w = .050 r6 v g rf input j3 j1 c5 ne651r479a j2 rf output
f c = 1.96 ghz, v ds = 3.5 v 20 22 24 26 28 30 32 34 14 12 10 8 6 4 2 60 50 40 30 20 10 0 0 16 18 20 4 6 8 1012141618 02 70 gain, i dsq = 250 ma pae, i dsq = 250 ma gain, i dsq = 100 ma pae, i dsq = 100 ma gain, i dsq = 50 ma pae, i dsq = 50 ma 20 22 24 26 28 30 32 34 14 12 10 8 6 4 2 60 50 40 30 20 10 0 0 16 18 20 4 6 8 1012141618 02 70 gain, i dsq = 250 ma pae, i dsq = 250 ma gain, i dsq = 100 ma pae, i dsq = 100 ma gain, i dsq = 50 ma pae, i dsq = 50 ma f c = 1.96 ghz, vds = 5 v gain, g a (db) output power, p out (dbm) output power, p out (dbm) gain, g a (db) power added efficiency, pae (%) power added efficiency& gain vs. output power power added efficiency, pae (%) power added efficiency& gain vs. output power i dsq = 50 ma i dsq = 100 ma i dsq = 250 ma f c = 1.96 ghz, p out = each tone vds = 3.5 v 20 10 0 -10 -20 -30 -40 20 222 16 24 18 26 34 28 32 30 -60 -50 8 6 4 01014 12 20 10 0 -10 -20 -30 -40 20 222 16 24 18 26 34 28 32 30 -60 -50 8 6 4 01014 12 i dsq = 50 ma i dsq = 100 ma i dsq = 250 ma f c = 1.96 ghz, p out = each tone vds = 5 v third order intermodulation distortion, im 3 (dbc) total output power, p out (dbm) third order intermodulation vs. total output power third order intermodulation distortion, im 3 (dbc) total output power, p out (dbm) third order intermodulation vs. total output power gain, g (db) frequency, f (ghz) gain and saturated power vs. frequency gain, g (db) frequency, f (ghz) gain and saturated power vs. frequency gain (db) 5 v at 50 ma gain (db) 5 v at 250 ma p out (db) 5 v at 50 ma p out (db) 5 v at 250 ma 18 33 32 31 30 29 28 2.00 1.98 1.96 1.94 1.92 1.9 8 9 10 11 12 13 14 15 16 17 2.02 gain (db) 3.5 v at 50 ma gain (db) 3.5 v at 250 ma p out (db) 3.5 v at 50 ma p out (db) 3.5 v at 250 ma 18 30 29 28 27 26 25 2.00 1.98 1.96 1.94 1.92 1.9 8 9 10 11 12 13 14 15 16 17 2.02 saturated power, p out (dbm) saturated power, p out (dbm) typical application circuit performance at v ds = 3.5 v and v ds = 5 v ne651r79a
ne651r479a third order intermodulation distortion, im 3 (dbc) total output power, p out (dbm) third order intermodulation vs. total output power -20 -30 -35 -40 -45 -50 -25 16 26 24 22 20 18 28 test condition: circuit optimized for p-2db from 2.64 to 2.69 ghz instantaneous bandwidth when biasing at 5 v 50 ma 50 ma 100 ma 300 ma 350 ma 200 ma 150 ma typical application circuit performance at vds = 5 v, f = 2.66 ghz output power, p out (dbm) input power, p in (dbm) output power vs. input power 34 28 24 20 18 16 32 16 26 24 22 20 18 28 14 12 10 8 26 30 test condition: circuit optimized for p-2db from 2.64 to 2.69 ghz instantaneous bandwidth when biasing at 5 v 50 ma 50 ma 100 ma 300 ma 350 ma 200 ma 150 ma
recommended p.c.b. layout (units in mm) 4.0 1.7 0.5 6.1 source drain gate 0.5 5.9 1.2 1.0 0.5 through hole ? 0.2x33 infrared reflow package peak temperature: 235 ? c or below ir35-00-2 time: 30 seconds or less (at 210 ? c) count: 2, exposure limit: none partial heating pin temperature: 260 ? c- time: 5 seconds or less (per pin row) exposure limit: none recommended soldering conditions 1 this product should be soldered under the following recommended conditions. for soldering methods and conditions other than th ose recommended below, contact your cel sales representative. recommended condition symbol soldering conditions soldering method note: 1. caution: do not use different soldering methods together (except for partial heating). ne651r479a
ldpkg l=0.001 nh ld l=0.55 nh q1 cdspkg c=0.1 pf cdspkg c=0.1 pf lspkg l=0.001 nh source lspkg l=0.001 nh ga te lg l=1.45 nh drain 11 /02/2006 schematic parameter units capacitance picofarads inductance nanohenries resistance ohms units model range frequency: 0.5 to 4 ghz bias: v ds = 2.2 v to 4.6 v, i d = 50 ma to 350 ma date: 6/02/2003 parameters q1 parameters q1 vto 0.9255 rg 1.0 vtosc 0 rd 0.2 alpha 1.5 rs 0.05 beta 0.964 rgmet 0 gamma 0 kf 0 gammadc (2) 0.002 af 1 q 1.5 tnom 27 delta 0 xti 3 vbi 0.6 eg 1.43 is 1e-16 vtotc 0 n 1 betatce 0 ris 0 ffe 1 rid 0 tau 30e-12 cds 0.2e-12 rdb 60 cbs 100e-12 cgso (3) 14e-12 cgdo (4) 1.1e-12 delta1 0.3 delta2 0.2 fc 0.5 vbr infnity (1) series iv libra tom model the parameter in libra corresponds to the parameter in pspice: (2) gammadc gamma (3) cgso cgs (4) cgdo cgd fet nonlinear model parameters (1) ne651r479a nonlinear model
4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408) 919-2500 facsimile: ( 408 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substances in electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix ? indicates that the device is pb-free. the ?z suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cel? understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information. restricted substance per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -az lead (pb) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmium < 100 ppm not detected hexavalent chromium < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: information provided by cel on its website or in other communications concerting the substan ce content of its products represents knowledge and belief as of the date that it is provided. cel bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. efforts are underway t o better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and ac curate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. cel and ce l suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall cel? liability arising out of such information exceed the total purchase price of the cel part(s) at issue s old by cel to customer on an annual basis. see cel terms and conditions for additional clarification of warranties and liability.

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